PIN diodes
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Information for Authority record
Other Identifiers
Wikidata:
Q2628074
Library of congress:
sh2005008787
Sources of Information
- Work cat.: Webb, T. Fabrication, code simulation, and calibration of silicon PIN diode detectors for accelerator applications, 2004:p. 4 (PIN diode; p-i-n diode; the most useful of diodes, with respect to efficient charge collection and unperturbed time history of the beam, is the p-i-n diode or PIN diode)
- ATIS telecom glossary 2000 online, viewed Dec. 27, 2005(PIN diode; Acronym for positive-intrinsic-negative diode. A photodiode with a large, neutrally doped intrinsic region sandwiched between p-doped and n-doped semiconducting regions; Synonym: PIN photodiode)
- NASA thesaurus, Vol. 1, 1988:p . 544 (P-I-N diodes; Use: P-I-N junctions)
Wikipedia description:
A PIN diode is a diode with a wide, undoped intrinsic semiconductor region between a p-type semiconductor and an n-type semiconductor region. The p-type and n-type regions are typically heavily doped because they are used for ohmic contacts. The wide intrinsic region is in contrast to an ordinary p–n diode. The wide intrinsic region makes the PIN diode an inferior rectifier (one typical function of a diode), but it makes it suitable for attenuators, fast switches, photodetectors, and high-voltage power electronics applications. The PIN photodiode was invented by Jun-Ichi Nishizawa and his colleagues in 1950. It is a semiconductor device.
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